Darboux Transformation for Tzitzeica Equation

We present a Darboux transformation for Tzitzeica equation associated with 3 × 3 matrix spectral problem. The explicit solution of Tzitzeica equation is obtained.     

对求解非线性方程方法的探索

BaiCL在2001年提出了双曲函数法，并把解设成具体的双曲函数，即sinhw和coshw的线性组合．本文把解设成是由2个函数f(ξ)和g(ξ)组成的线性组合，它们可以有多种取法，从而使方程更直接、更有效．借助数学软件Maple，用改进后的方法和吴文俊消元法，求解Bai C L文中的一个例子，获得了包含Bai文结果在内的更为丰富、精确的行波解．     

试探方程法及其在非线性发展方程中的应用

提出了一种比较系统的求解非线性发展方程精确解的新方法, 即试探方程法. 以一个带5阶 导数项的非线性发展方程为例, 利用试探方程法化成初等积分形式，再利用三阶多项式的完 全判别系统求解，由此求得的精确解包括有理函数型解, 孤波解, 三角函数型周期解, 多项 式型Jacobi椭圆函数周期解和分式型Jacobi椭圆函数周期解 关键词： 试探方程法 非线性发展方程 孤波解 Jacobi椭圆函数 周期解     

混合参数对中小质量恒星结构和演化的影响

计算了在不同对流混合参数下,8M⊙和1.3M⊙恒星由主序阶段到红巨星阶段的演化.得出以下主要结论:不同大小的混合参数导致了恒星在HR图中的演化轨迹、对流外壳的第2次向内延伸深度和回退程度、氢壳层源的温度和产能率,以及氦燃烧核的寿命等有显著差别,还注意到8M⊙恒星混合参数α≥2.2时会出现第2次蓝拐.     

A transform method for linear evolution PDEs on a finite interval

We study initial boundary value problems for linear scalar evolutionpartial differential equations, with spatial derivatives ofarbitrary order, posed on the domain {t > 0, 0 < x <L}. We show that the solution can be expressed as an integralin the complex k-plane. This integral is defined in terms ofan x-transform of the initial condition and a t-transform ofthe boundary conditions. The derivation of this integral representationrelies on the analysis of the global relation, which is an algebraicrelation defined in the complex k-plane coupling all boundaryvalues of the solution. For particular cases, such as the case of periodic boundaryconditions, or the case of boundary value problems for even-orderPDEs, it is possible to obtain directly from the global relationan alternative representation for the solution, in the formof an infinite series. We stress, however, that there existinitial boundary value problems for which the only representationis an integral which cannot be written as an infinite series.An example of such a problem is provided by the linearized versionof the KdV equation. Similarly, in general the solution of odd-orderlinear initial boundary value problems on a finite intervalcannot be expressed in terms of an infinite series.     

Entanglement Evolution of a 2-Qutrit System Interacting with a Fermionic Bath

Based on the algebraic entanglement measure proposed [G. Vidal et al., Phys. Rev. A 65 (2002) 032314],we study the entanglement evolution of both pure quantum states and mixed ones of 2-qutrit system in a symmetrybroken environment consisting of a fermionic bath. Entanglement of states will decrease or remain constant under the influence of environment, and the class of states which remain unchanged has been found out.     

共振原子蒸气中激光脉冲的时空特性

在柱对称条件下，利用耦合的布洛赫－麦克斯韦方程，研究了激光脉冲在原子蒸气介质中的共振传播。考察了脉中在时空中的演化。数值计算结果表明激光脉冲在传播中，由于自感应透明与光波的衍射效应，表现出复杂的相干现象。     

Effect of borohydride as reducing agent on the structures and electrochemical properties of Pt/C catalyst

In this paper, we found that boron deposited on the surface of support when sodium borohydride used as reducing agent during the preparation of Pt/C catalyst. The deposition of boron markedly reduces particle size of Pt, raises electrochemical active surface (EAS) area of catalyst and electrochemical activity for hydrogen evolution or oxygen reduction reaction (ORR) compared with which prepared using other reducing agents (hydrogen and formaldehyde).     

Investigations of He implantation and subsequent annealing effects in InP

The influence of 70 keV He⁺ ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion fluences of 1 × 10¹⁶, 5 × 10¹⁶ and 1 × 10¹⁷ cm⁻² were studied in the as-implanted condition as well as after annealing at 640 °C for times between 5 and 40 min. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increases after 5 min annealing, then after longer annealing times it starts to decline gradually until it reaches a value close to the value of the as-grown sample. This implies that vacancy-like defects can be created in InP by He implantation followed by short-thermal annealing at T > 600 °C. Comparison of the results with a study where cavities were observed in He-implanted InP has been carried out.